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DMN3012LFG-7

Part No DMN3012LFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2 N-CH 30V POWERDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Mosfet Array 2 N-Channel (Dual) 30V 20A (Tc) 2.2W Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Package Reel - TR
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerLDFN
Case / Package PowerDI3333-8
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868986-DMN3012LFG-7
Ultra Librarian 3D Model Ultra Librarian DMN3012LFG-7 CAD Model

Description

Introducing the DMN3012LFG-7 MOSFET from Diodes Incorporated

The DMN3012LFG-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by the reputable Diodes Incorporated. This MOSFET is a testament to the company's commitment to providing power management solutions that meet the rigorous demands of modern electronic applications. The DMN3012LFG-7 is part of Diodes Incorporated's extensive portfolio of semiconductor products, which are known for their reliability, efficiency, and innovation.

Key Features and Benefits

  • Low On-Resistance: The device boasts a low on-resistance (RDS(on)), which ensures minimal power loss and heat generation during operation, leading to higher efficiency in power conversion and management applications.
  • High Continuous Drain Current: With a high continuous drain current (ID), this MOSFET can handle significant amounts of current, making it suitable for high-power applications.
  • PowerDI3333-8 Package: Enclosed in a compact PowerDI3333-8 package, the DMN3012LFG-7 is designed for space-constrained applications, providing excellent power density and saving valuable board space.
  • Halogen-Free: As an environmentally friendly product, the DMN3012LFG-7 is completely halogen-free, reducing the potential for environmental harm and enhancing its appeal for eco-conscious manufacturers and consumers.

Applications

The versatility of the DMN3012LFG-7 makes it an ideal choice for a wide range of applications, including:

  • DC-DC Converters
  • Power Management Functions
  • Load Switches
  • Battery Protection Circuits
  • Computing and Server Systems
  • Consumer Electronics

Technical Specifications

The DMN3012LFG-7 features a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a maximum continuous drain current (ID) of 18A at 25°C. The device also maintains a low threshold voltage (VGS(th)), ensuring it can be driven at lower gate voltages, which is beneficial for battery-operated devices.

For designers and engineers looking for a MOSFET that offers both performance and practicality, the DMN3012LFG-7 from Diodes Incorporated stands out as a robust and reliable choice. Its combination of efficiency, thermal management, and compact form factor make it an essential component for power-sensitive applications across various industries.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1496 $63.2280
125+ $0.9433 $117.9125
190+ $0.9138 $173.6220
265+ $0.8844 $234.3660
340+ $0.8549 $290.6660
455+ $0.7665 $348.7575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,170 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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