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DMN3018SFG-13

Part No DMN3018SFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.5A POWERDI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 13.2nC @ 10V
Max Input Capacitance 697pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 21 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI3333-8
Dimension 8-PowerWDFN
Win Source Part Number 1033745-DMN3018SFG-13
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Signal Processing, Industrial
Ultra Librarian 3D Model Ultra Librarian DMN3018SFG-13 CAD Model

Description

Product Overview: DMN3018SFG-13 MOSFET

The DMN3018SFG-13 is a high-performance, N-Channel MOSFET produced by Diodes Incorporated, a leading manufacturer in the semiconductor market. This power MOSFET is designed to deliver efficient power conversion with low on-resistance and fast switching capabilities. It is widely used in a variety of applications, including power management, load switching, and motor control in consumer, industrial, and automotive sectors.

Key Features

  • Voltage and Current Ratings: The DMN3018SFG-13 is capable of withstanding drain-source voltages up to 30V, and it supports continuous drain currents up to 18A, making it suitable for high-performance power applications.
  • Low On-Resistance: With an RDS(on) as low as 8.5mΩ at VGS = 10V, this MOSFET ensures minimal power loss during operation, enhancing overall efficiency.
  • PowerDI®3333-8 Package: The device is housed in a compact PowerDI®3333-8 package, which offers excellent thermal performance and is optimized for a small footprint on the PCB.
  • Fast Switching Speed: The DMN3018SFG-13 boasts fast switching speeds, which is crucial for reducing switching losses and improving the performance of power conversion systems.
  • RoHS Compliant: This product meets the RoHS (Restriction of Hazardous Substances) standards, which means it is free from harmful substances such as lead, making it environmentally friendly.

Applications

The versatility of the DMN3018SFG-13 allows it to be integrated into a wide range of applications. It is particularly well-suited for:

  • DC-DC Converters
  • Power Supply Circuits
  • Load Switches
  • Motor Drives
  • Battery Management Systems
  • Automotive Electronics

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products that meet the stringent requirements of the electronics industry. The DMN3018SFG-13 MOSFET is no exception, undergoing rigorous testing and quality control processes to ensure reliability and performance in all applications.

Overall, the DMN3018SFG-13 from Diodes Incorporated is an exceptional choice for designers looking for a robust, efficient, and reliable N-Channel MOSFET that can handle significant power levels in a compact form factor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1651 $57.7850
855+ $0.1355 $115.8525
1,325+ $0.1312 $173.8400
1,820+ $0.1271 $231.3220
2,355+ $0.1228 $289.1940
3,150+ $0.1101 $346.8150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,680 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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