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DMN3029LFG-13

Part No DMN3029LFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 5.3A PWRDI333-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 15 V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
Base Product Number DMN3029
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 585469-DMN3029LFG-13
Ultra Librarian 3D Model Ultra Librarian DMN3029LFG-13 CAD Model

Description

DMN3029LFG-13 N-Channel MOSFET by Diodes Incorporated

The DMN3029LFG-13 is a high-performance N-Channel MOSFET designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, which are renowned for their reliability, efficiency, and advanced technology.

The DMN3029LFG-13 is built using advanced trench MOSFET technology, which ensures that the device offers low on-resistance and a high switching performance. The MOSFET is housed in a PowerDI3333-8 type package that provides a compact footprint while maintaining excellent thermal performance, making it suitable for a wide range of power applications.

Key Features:

  • Low On-Resistance: The device features a low on-resistance of typically 8.7mΩ at VGS = 10V, which enhances its efficiency in conducting current and reduces power losses during operation.
  • High Continuous Drain Current: It can handle a continuous drain current of up to 23A, making it well-suited for applications that require high current handling capabilities.
  • High-Speed Switching: With fast switching capabilities, the DMN3029LFG-13 is ideal for high-speed circuit designs, contributing to improved overall performance of the system.
  • PowerDI3333-8 Package: The compact and thermally efficient package allows for better space utilization in PCB designs and enhances thermal management within electronic systems.
  • Lead-Free and RoHS Compliant: The product is environmentally friendly, adhering to the RoHS directive, which restricts the use of certain hazardous substances in electrical and electronic equipment.

Applications:

The DMN3029LFG-13 MOSFET is versatile and can be used in various applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Load switches
  • High-efficiency power management designs

With its robust design and superior performance characteristics, the DMN3029LFG-13 from Diodes Incorporated is a reliable choice for designers looking to enhance the efficiency and performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2063 $50.5435
520+ $0.1930 $100.3600
805+ $0.1864 $150.0520
1,160+ $0.1731 $200.7960
1,505+ $0.1664 $250.4320
1,880+ $0.1598 $300.4240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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