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DMN6075SQ-13

Part No DMN6075SQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 41V~60V SOT23 T&R  /  N-Channel 60 V 2A (Ta) 800mW (Ta) Surface Mount SOT-23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 606 pF @ 20 V
Power Dissipation (Max) 800mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
ECCN EAR99
HTSUS 8541.29.0095
Other Names 31-DMN6075SQ-13TR
Standard Package 10,000
Win Source Part Number 1136934-DMN6075SQ-13
Ultra Librarian 3D Model Ultra Librarian DMN6075SQ-13 CAD Model

Description

DMN6075SQ-13 - N-Channel Enhancement Mode Field Effect Transistor by Diodes Incorporated

The DMN6075SQ-13 is a high-performance, N-Channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This power MOSFET is tailored for efficient power management and conversion in a wide range of electronic applications. Its compact form factor and robust design make it a suitable choice for space-constrained and power-sensitive designs.

Key Features:

  • Low On-Resistance: The DMN6075SQ-13 offers a low on-resistance, which results in reduced conduction losses and improved power efficiency. This feature is particularly beneficial in applications where power conservation is critical.
  • High Continuous Drain Current: This MOSFET supports a high continuous drain current, making it capable of handling high power applications without compromising performance.
  • Fast Switching Speed: The fast switching characteristics of the DMN6075SQ-13 enable quick transitions between on and off states, which is essential for high-frequency power switching and reduces switching losses.
  • Thermal Management: With its excellent thermal performance, the DMN6075SQ-13 is able to operate reliably over a wide temperature range, ensuring stability and longevity in various operating conditions.

Applications:

The versatility of the DMN6075SQ-13 allows it to be used in a multitude of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Battery management systems
  • Motor control modules
  • Load switches
  • High-efficiency power management designs

Product Specifications:

The DMN6075SQ-13 comes in a surface mount package, which is not only space-saving but also compatible with automated assembly processes. It is RoHS compliant, indicating adherence to environmental standards by restricting the use of certain hazardous substances. The MOSFET's technical specifications include a drain-source voltage (V<sub>DS) of 60V, a gate-source voltage (V<sub>GS) of ±20V, and a maximum continuous drain current (I<sub>D) at 25°C of 7.3A.

Quality and Reliability:

Diodes Incorporated ensures that the DMN6075SQ-13 meets stringent quality and reliability standards. Each component is rigorously tested to guarantee performance under specified conditions. Customers can trust Diodes Incorporated for delivering high-quality semiconductor products that provide efficient, reliable solutions for electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
260+ $0.1956 $50.8560
625+ $0.1605 $100.3125
965+ $0.1555 $150.0575
1,330+ $0.1505 $200.1650
1,720+ $0.1455 $250.2600
2,305+ $0.1304 $300.5720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,114 pieces
MOQ: 260 pcs
Order Increment : 1 pcs
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