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DMN61D8LQ-7

Part No DMN61D8LQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 470MA SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 29 Weeks
Features N-Channel 60 V 470mA (Ta) 390mW (Ta) Surface Mount SOT-23-3
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3
Family Name DMN61
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number DMN61D8LQ-7DITR, DMN61D8LQ-7DIDKR, DMN61D8LQ-7DICT
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869028-DMN61D8LQ-7
Ultra Librarian 3D Model Ultra Librarian DMN61D8LQ-7 CAD Model

Description

Product Overview: DMN61D8LQ-7 MOSFET by Diodes Incorporated

The DMN61D8LQ-7 from Diodes Incorporated is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) that is designed for power switching applications. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and reliable components for modern electronic circuits.

Constructed with advanced trench technology, the DMN61D8LQ-7 offers low on-resistance and a high continuous drain current, making it an excellent choice for high-efficiency power management tasks. The device is housed in a compact SOT-23 package, which is ideal for space-constrained applications while still ensuring good thermal performance and power handling capabilities.

Key Features:

  • Low On-Resistance: The MOSFET provides a low R<sub>DS(on), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current: With the ability to handle a high continuous drain current, this component is suitable for demanding power applications.
  • Advanced Trench Technology: The use of trench technology ensures minimal gate charge and low gate resistance, facilitating faster switching speeds.
  • Compact Footprint: The SOT-23 package is not only space-efficient but also offers a solid thermal performance for its size.
  • RoHS Compliant: The DMN61D8LQ-7 is compliant with RoHS standards, ensuring that it meets environmental regulations by avoiding the use of hazardous substances.

Applications:

The DMN61D8LQ-7 is versatile and can be used in a variety of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Portable Devices
  • Motor Control Systems

Whether you're designing power supplies, portable electronics, or any other power-sensitive application, the DMN61D8LQ-7 MOSFET from Diodes Incorporated offers the reliability and performance needed to ensure efficient operation. Its advanced features and compact form factor make it a smart choice for engineers looking to optimize their designs for both performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6063 $51.5355
205+ $0.4975 $101.9875
315+ $0.4819 $151.7985
430+ $0.4664 $200.5520
555+ $0.4508 $250.1940
745+ $0.4042 $301.1290
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,608 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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