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DMN67D8LDW-13

Part No DMN67D8LDW-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.23A SOT363 / Mosfet Array 2 N-Channel (Dual) 60V 230mA 320mW Surface Mount SOT-363
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 230mA
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Power - Max 320mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Base Product Number DMN67
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 10,000
Win Source Part Number 1323901-DMN67D8LDW-13
Ultra Librarian 3D Model Ultra Librarian DMN67D8LDW-13 CAD Model

Description

Product Overview: DMN67D8LDW-13

Diodes Incorporated presents the DMN67D8LDW-13, a high-performance, dual N-channel enhancement mode field-effect transistor (FET) designed to deliver efficient power management solutions for a diverse range of applications. This advanced semiconductor device is housed in a compact SOT-363 package, making it an ideal choice for space-constrained designs that demand high power density and energy efficiency.

Key Features

  • Low On-Resistance: The DMN67D8LDW-13 boasts an exceptionally low on-resistance, which minimizes conduction losses and improves overall efficiency. This feature is particularly beneficial in applications where low voltage operation is critical.
  • High-Speed Switching: Engineered for fast switching performance, this FET is capable of operating at high frequencies, which helps reduce switching losses and enables more efficient power conversion.
  • Dual N-Channel Configuration: The dual N-channel setup allows for flexibility in design, providing the option to use both channels in parallel for higher current applications or individually for independent control.
  • Lead-Free and RoHS Compliant: In line with environmental standards, the DMN67D8LDW-13 is both lead-free and RoHS compliant, making it a responsible choice for eco-friendly electronic designs.

Applications

The DMN67D8LDW-13 is versatile and can be utilized in a wide array of electronic circuits. Its typical applications include, but are not limited to:

  • Power Management Systems
  • DC-DC Converters
  • Battery Management Circuits
  • Load Switches
  • Motor Control Modules

Technical Specifications

The DMN67D8LDW-13 features a drain-source voltage (V<sub>DS) of 60V, which provides a generous margin for varied electrical environments. The continuous drain current (I<sub>D) is rated at 280mA, ensuring the device can handle substantial loads without compromising performance. With a thermal resistance junction-to-ambient of 357 °C/W, this FET maintains operational integrity even at elevated temperatures.

Diodes Incorporated's commitment to quality and performance is embodied in the DMN67D8LDW-13, making it a reliable and efficient solution for designers looking to enhance their power management systems. Whether for consumer electronics, automotive applications, or industrial controls, the DMN67D8LDW-13 offers the performance and compact form factor needed for today's demanding electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
700+ $0.0716 $50.1200
1,705+ $0.0588 $100.2540
2,635+ $0.0570 $150.1950
3,630+ $0.0551 $200.0130
4,695+ $0.0533 $250.2435
6,280+ $0.0478 $300.1840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,837 pieces
MOQ: 700 pcs
Order Increment : 1 pcs
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