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DMP21D5UFD-7

Part No DMP21D5UFD-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 20V 0.6A 3-Pin X1-DFN T/R / MOSFET P-CH 20V DFN1212-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 800nC @ 8V
Max Input Capacitance 46.1pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 1 Ohm @ 100mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package X1-DFN1212-3
Dimension 3-UDFN
Win Source Part Number 1033826-DMP21D5UFD-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name DMP21D5UFD
Introduction Date July 26, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian DMP21D5UFD-7 CAD Model

Description

Introducing the DMP21D5UFD-7 P-Channel MOSFET from Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the DMP21D5UFD-7, a high-performance P-Channel enhancement mode MOSFET designed for power management applications. This MOSFET is optimized for low threshold drive and is housed in a compact, surface-mountable PowerDI3333-8 package, making it ideal for space-constrained applications.

The DMP21D5UFD-7 boasts an impressive continuous drain current of -8.4A, with a -10V gate source voltage, ensuring robust performance for a wide range of applications. Its low on-resistance of just 24mΩ at a -4.5V gate drive highlights its efficiency, allowing for reduced power losses and improved thermal management. This feature is particularly beneficial for battery-powered devices where energy conservation is paramount.

With a drain-source voltage (Vdss) of -20V, the DMP21D5UFD-7 is capable of handling moderate power levels while maintaining a high degree of reliability and stability. The device also features fast switching speeds, which are essential for efficient power regulation and conversion in modern electronic circuits.

One of the key advantages of the DMP21D5UFD-7 is its ultra-low gate charge (Qg), which minimizes switching losses and enables faster switching frequencies. This characteristic is critical for applications such as DC-DC converters, load switches, and power management in portable electronics, where efficiency is a top priority.

The MOSFET is also characterized by its robustness, with a maximum junction temperature of 150°C, ensuring reliability even under strenuous operating conditions. Additionally, the device is RoHS compliant, adhering to environmental standards by avoiding hazardous substances in its construction.

Overall, the DMP21D5UFD-7 from Diodes Incorporated is a versatile and reliable choice for designers looking to enhance the performance of their power management systems. Its compact form factor, high efficiency, and thermal performance make it an excellent selection for a broad range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.2056 $58.5960
685+ $0.1686 $115.4910
1,065+ $0.1629 $173.4885
1,460+ $0.1582 $230.9720
1,895+ $0.1525 $288.9875
2,525+ $0.1374 $346.9350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,200 pieces
MOQ: 285 pcs
Order Increment : 1 pcs
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