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DMP2225LQ-7

Part No DMP2225LQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 8V~24V SOT23 T&R 3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 110mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 10 V
Power Dissipation (Max) 1.08W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMP2225
Standard Package 3,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 821832-DMP2225LQ-7
Ultra Librarian 3D Model Ultra Librarian DMP2225LQ-7 CAD Model

Description

Introducing the DMP2225LQ-7 P-Channel MOSFET by Diodes Incorporated

The DMP2225LQ-7 is a high-performance, P-Channel enhancement mode field effect transistor (MOSFET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is part of their extensive range of power management devices, tailored for energy-efficient and compact solutions. The DMP2225LQ-7 is particularly suitable for applications requiring a combination of low on-resistance and high switching speed.

Key Features

  • Low Threshold Voltage: The device operates at a low threshold voltage, which ensures that it can be controlled at lower gate voltages, making it compatible with a wide range of drive circuits and ideal for low-voltage applications.
  • High Power Dissipation: With a power dissipation of 1.3W, the DMP2225LQ-7 can handle significant power, making it suitable for high-load applications.
  • Low On-Resistance: A low on-resistance of 65 mOhms minimizes power loss and improves efficiency, which is critical for battery-powered devices and energy-sensitive systems.
  • ESD Protected: The gate is protected from electrostatic discharge (ESD) events up to 1.5kV, ensuring device reliability and longevity in environments prone to static build-up.

Applications

The DMP2225LQ-7 is versatile and can be used across various applications, including:

  • Load/Power Switching
  • Battery Management
  • DC-DC Converters
  • Power Amplification

Package and Environmental Compliance

The device is available in a compact SOT-23 package, which is ideal for space-constrained applications. It is also RoHS compliant, meaning it adheres to the latest environmental standards by avoiding the use of hazardous substances in its construction.

Quality and Reliability

Diodes Incorporated ensures that the DMP2225LQ-7 meets the highest quality and reliability standards. The device undergoes rigorous testing and quality control measures to provide consistent performance and dependability for critical applications.

With its robust features, the DMP2225LQ-7 P-Channel MOSFET from Diodes Incorporated stands out as a prime choice for designers looking to enhance power efficiency and reliability in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
555+ $0.0906 $50.2830
1,180+ $0.0849 $100.1820
1,830+ $0.0820 $150.0600
2,625+ $0.0763 $200.2875
3,410+ $0.0734 $250.2940
4,260+ $0.0705 $300.3300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,701 pieces
MOQ: 555 pcs
Order Increment : 1 pcs
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