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DMP3056L-13

Part No DMP3056L-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.3A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 642 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.38W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMP3056
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378266-DMP3056L-13
Ultra Librarian 3D Model Ultra Librarian DMP3056L-13 CAD Model

Description

Introducing the DMP3056L-13 P-Channel MOSFET by Diodes Incorporated

The DMP3056L-13 is a high-performance P-Channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and is suitable for a wide range of applications, including load switch, power management, and battery protection circuits.

Encased in a compact SOT-23 package, the DMP3056L-13 is an ideal choice for space-constrained applications. It features a low on-resistance of typically 30 mΩ at VGS = -10V, ensuring minimal power loss and improved overall efficiency. This characteristic makes it an excellent option for designs that require high current handling with low heat generation.

The device operates at a maximum continuous drain current of -6.7A, which allows for robust performance in demanding situations. With a threshold voltage as low as -0.45V, the DMP3056L-13 ensures a low gate drive requirement, translating to reduced power consumption and facilitating compatibility with low-voltage drive signals.

The DMP3056L-13 is designed with reliability in mind, featuring a maximum junction temperature of 150°C. This high thermal threshold ensures stable operation even under high stress and temperature conditions, making it suitable for industrial and automotive applications where reliability is paramount.

Additionally, the device boasts fast switching capabilities, which is crucial for applications that demand high-speed operations. Its body diode exhibits low reverse recovery time and charge, which minimizes switching losses and enhances performance during commutation in power circuits.

Diodes Incorporated's commitment to quality is evident in the DMP3056L-13, which is RoHS compliant and halogen-free, reflecting the company's dedication to environmental sustainability. With its combination of efficiency, reliability, and eco-friendliness, the DMP3056L-13 stands out as a superior choice for designers and engineers looking to optimize their power management solutions.

To summarize, the DMP3056L-13 from Diodes Incorporated is a versatile and reliable P-Channel MOSFET that offers low on-resistance, high current capacity, and fast switching performance, all packed into a small footprint suitable for a variety of power management applications.

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