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DMT10H015LCG-7

Part No DMT10H015LCG-7
Manufacturer Diodes Incorporated
Catalog TRANSISTORS
Description MOSFET N-CH 100V 9.4A/34A 8DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Category Discrete Semiconductor Products> Transistors FETs, MOSFETs Single FETs, MOSFETs
Part Status Active
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1871 pF @ 50 V
Operating Temperature -55°C ~ 155°C (TJ)
Mounting Type Surface Mount
Supplier Device Package V-DFN3333-8
Win Source Part Number WS1310330-DMT10H015LCG-7
Ultra Librarian 3D Model Ultra Librarian DMT10H015LCG-7 CAD Model

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch.

ā— Backlighting ā— Power Management Functions ā— DC-DC Converters

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3755 $58.2025
375+ $0.3082 $115.5750
585+ $0.2986 $174.6810
800+ $0.2889 $231.1200
1,035+ $0.2793 $289.0755
1,385+ $0.2504 $346.8040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 977 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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