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DMT3006LFG-13

Part No DMT3006LFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 44 Weeks
Features N-Channel 30 V 16A (Ta), 55.6A (Tc) 27.8W (Tc) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMT3006
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869128-DMT3006LFG-13
Ultra Librarian 3D Model Ultra Librarian DMT3006LFG-13 CAD Model

Description

DMT3006LFG-13 MOSFET by Diodes Incorporated

The DMT3006LFG-13 is a high-performance metal-oxide-semiconductor field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This particular MOSFET is part of Diodes Incorporated's extensive range of power management devices, which are engineered to deliver efficient and reliable performance for a wide array of electronic applications.

Key Features

  • Low On-Resistance: The DMT3006LFG-13 boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency in applications where it is deployed.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D) capability, this MOSFET can handle significant amounts of current, making it suitable for power-intensive applications.
  • PowerDI3333-8 Package: The device comes in a compact PowerDI3333-8 package, which offers a small footprint while maintaining excellent thermal performance.
  • Halogen and Lead-Free: In line with modern environmental standards, the DMT3006LFG-13 is both halogen and lead-free, contributing to environmentally friendly electronic designs.

Applications

The versatility of the DMT3006LFG-13 MOSFET makes it ideal for a wide range of applications, including:

  • Power management circuits
  • DC-DC converters
  • Battery-powered devices
  • Load switches
  • Motor control systems

Technical Specifications

Below are some of the technical specifications of the DMT3006LFG-13:

  • Drain-Source Voltage (V<sub>DS): 30V
  • Continuous Drain Current (I<sub>D): 24A
  • Power Dissipation (P<sub>D): 2.5W
  • On-Resistance (R<sub>DS(on)): 5.5mΩ at V<sub>GS = 10V
  • Operating Temperature Range: -55°C to +150°C

The DMT3006LFG-13 is a testament to Diodes Incorporated's commitment to providing advanced semiconductor solutions that meet the evolving needs of the electronics industry. With its robust performance characteristics, this MOSFET is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.

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