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DMT4005SCT

Part No DMT4005SCT
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A TO220AB / N-Channel 40 V 100A (Tc) 2.3W (Ta), 104W (Tc) Through Hole TO-220-3
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3062 pF @ 20 V
Power Dissipation (Max) 2.3W, 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number DMT4005
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1324646-DMT4005SCT
Ultra Librarian 3D Model Ultra Librarian DMT4005SCT CAD Model

Description

DMT4005SCT - A High-Efficiency MOSFET from Diodes Incorporated

The DMT4005SCT is a state-of-the-art, dual N-channel enhancement mode field effect transistor (MOSFET) designed and produced by Diodes Incorporated. This component is engineered to deliver high efficiency and reliability in a wide range of applications, making it a versatile choice for modern electronic designs. The DMT4005SCT is housed in a compact SOT-23 package, offering a space-saving solution without compromising performance.

With its dual MOSFET configuration, the DMT4005SCT enables designers to achieve lower conduction losses and improve overall power density. The product features a low on-resistance (R<sub>DS(on)), which translates to reduced power dissipation and improved thermal performance. This characteristic is particularly beneficial in applications that demand high efficiency, such as power management circuits, DC-DC converters, and load switches.

One of the key specifications of the DMT4005SCT is its drain-source voltage (V<sub>DSS) of 40V, which provides a comfortable margin for handling common voltage levels in various electronic circuits. Additionally, the device supports a continuous drain current (I<sub>D) of up to 5A, ensuring it can manage significant power requirements. The DMT4005SCT also boasts a fast switching speed, which is crucial for reducing switching losses in high-frequency operations.

Diodes Incorporated has designed the DMT4005SCT with protection features in mind. The device includes built-in gate-source voltage (V<sub>GS) protection, safeguarding the MOSFET from voltage spikes that could otherwise lead to premature failure. This adds an extra layer of reliability, making the DMT4005SCT a robust component for demanding environments.

For ease of integration into existing designs, the DMT4005SCT is compatible with standard SOT-23 footprint layouts. This allows for a straightforward drop-in replacement for other MOSFETs with similar package types, facilitating quick upgrades to existing products or prototypes.

In summary, the DMT4005SCT from Diodes Incorporated is a powerful, efficient, and reliable MOSFET solution suitable for a wide array of electronic applications. Its combination of high performance, compact size, and robust protection features make it an excellent choice for designers looking to optimize their power management strategies.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3171 $59.2695
110+ $1.0808 $118.8880
170+ $1.0469 $177.9730
230+ $1.0132 $233.0360
295+ $0.9794 $288.9230
395+ $0.8780 $346.8100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,600 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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