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Same model may have multiple batches, images only for reference.
IXFN210N30P3 Real Image
Same model may have multiple batches, images only for reference.

IXFN210N30P3

Part No IXFN210N30P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 192A SOT227B / N-Channel 300 V 192A (Tc) 1500W (Tc) Chassis Mount SOT-227B
Datasheet
IXFN210N30P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 268 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 16200 pF @ 25 V
Power Dissipation (Max) 1500W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXFN210
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -IXFN210N30P3
Standard Package 10
Win Source Part Number 1325260-IXFN210N30P3
Ultra Librarian 3D Model Ultra Librarian IXFN210N30P3 CAD Model

Description

The IXYS MOSFET (Metal Oxide) transistor is a high-performance N-Channel FET type electronic component.

  • Drain to Source Voltage (Vdss): 300 V
  • Continuous Drain Current (Id): 192A @ 25°C
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 10 V
  • Power Dissipation (Max): 1500W (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds: 16200 pF @ 25 V
  • Mounting: on a chassis
  • Package Quantity: 10
  • Ideal for Use: in discrete semiconductor products, transistors - FETs, MOSFETs - Single.

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