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DMT6012LSS-13

Part No DMT6012LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10.4A 8SO
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 49 Weeks
Features N-Channel 60 V 10.4A (Ta) 1.2W (Ta) Surface Mount 8-SO
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
Case / Package 8-SO
Family Name DMT6012
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869153-DMT6012LSS-13
Ultra Librarian 3D Model Ultra Librarian DMT6012LSS-13 CAD Model

Description

Overview of DMT6012LSS-13

The DMT6012LSS-13 is a high-performance, N-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a powerful solution for a wide range of applications, including power management, load switching, and DC-DC conversion in consumer electronics, telecom infrastructure, and computing environments.

Key Features

  • Low On-Resistance: The DMT6012LSS-13 boasts a low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power losses during operation.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D) capability, this MOSFET can handle significant power levels, making it suitable for demanding applications.
  • PowerDI5060-8 Package: Encased in a PowerDI5060-8 package, the DMT6012LSS-13 offers a compact footprint without compromising thermal performance, allowing for better power density in space-constrained designs.
  • Halogen-Free: As an environmentally conscious product, the DMT6012LSS-13 is completely halogen-free, adhering to current green standards and regulations.

Electrical Characteristics

The DMT6012LSS-13 operates with a drain-source voltage (V<sub>DS) of 60V, which is suitable for mid-range voltage applications. Its threshold voltage (V<sub>GS(th)) is optimized for low-voltage drive, ensuring compatibility with a variety of control circuits and logic levels.

Applications

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Load switches
  • Battery management systems

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the DMT6012LSS-13 is no exception. It is designed to meet high reliability standards, ensuring stable performance over its lifespan. The device undergoes rigorous testing and quality control measures to guarantee it meets the needs of even the most critical applications.

Conclusion

The DMT6012LSS-13 from Diodes Incorporated is a versatile and robust N-channel MOSFET that offers designers a balance of performance, efficiency, and compactness. Whether it's for power management in portable devices or for driving motors in industrial applications, this MOSFET stands as a reliable choice for engineers looking to optimize their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3493 $50.6485
350+ $0.2866 $100.3100
545+ $0.2777 $151.3465
745+ $0.2687 $200.1815
965+ $0.2598 $250.7070
1,290+ $0.2329 $300.4410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 145 pcs
Order Increment : 2 pcs
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