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DMT615MLFV-13

Part No DMT615MLFV-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V PWRDI3333 / N-Channel 60 V 8.5A (Ta), 38A (Tc) 1.76W (Ta) Surface Mount PowerDI3333-8 (Type UX)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1039 pF @ 30 V
Power Dissipation (Max) 1.76W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerDI3333-8 (Type UX)
Package / Case 8-PowerVDFN
Base Product Number DMT615
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 1055822-DMT615MLFV-13
Ultra Librarian 3D Model Ultra Librarian DMT615MLFV-13 CAD Model

Description

DMT615MLFV-13 - A High-Efficiency MOSFET from Diodes Incorporated

The DMT615MLFV-13 is a state-of-the-art, N-channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed using advanced trench technology to provide excellent RDS(on) and low gate charge performance, making it a perfect choice for a wide range of power management applications.

Encased in a compact and surface-mountable PowerDI3333-8 package, the DMT615MLFV-13 offers a perfect balance between high efficiency and a small footprint, making it ideal for space-constrained applications. With a continuous drain current (ID) of 6.5A and a drain-source voltage (VDS) of 30V, this MOSFET can handle significant power despite its diminutive size.

One of the key features of the DMT615MLFV-13 is its low threshold voltage (VGS(th)), which allows for efficient operation even at low gate voltages. This characteristic is particularly beneficial in low-power devices and battery-operated applications where power conservation is crucial. Additionally, the device's fast switching speed enhances performance in high-frequency circuits, reducing energy losses during power conversion processes.

The DMT615MLFV-13 is also characterized by its robust thermal performance, thanks to its PowerDI3333-8 package which provides excellent power dissipation capabilities. This ensures that the device operates reliably over a wide temperature range, making it suitable for demanding environments.

Applications for the DMT615MLFV-13 are diverse and include power management tasks such as DC-DC converters, power supplies, load switches, and battery management systems. Its high efficiency and reliability also make it an excellent choice for use in consumer electronics, computing devices, telecommunications, and industrial equipment.

In summary, the DMT615MLFV-13 from Diodes Incorporated is a high-performance, energy-efficient MOSFET that offers designers a compact, yet powerful, solution for a variety of power management challenges. With its advanced features and robust design, it stands as a testament to Diodes Incorporated's commitment to providing innovative semiconductor solutions.

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