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DMTH6010SK3-13

Part No DMTH6010SK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 16.3A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 16.3A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 36.3nC @ 10V
Max Input Capacitance 1940pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1033890-DMTH6010SK3-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMTH6010SK3-13 CAD Model

Description

DMTH6010SK3-13: A Robust N-Channel MOSFET from Diodes Incorporated

The DMTH6010SK3-13 is a high-performance N-Channel enhancement mode MOSFET designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets.

This MOSFET is built using advanced trench technology to provide excellent RDS(on) and low gate charge. This combination ensures the device is highly efficient when it comes to power management applications. The DMTH6010SK3-13 is housed in a robust PowerDI®3333-8 package, which offers not only a compact footprint but also a low thermal resistance, making it suitable for high-density circuit designs.

Key Features of the DMTH6010SK3-13:

  • Low On-Resistance: The device features very low RDS(on) values, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Continuous Drain Current: With a continuous drain current (ID) capability, the DMTH6010SK3-13 can handle significant power without overheating, making it ideal for high-power applications.
  • High-Speed Switching: The MOSFET's low gate charge (QG) allows for fast switching speeds, which is beneficial for applications that require efficient power regulation and management.
  • Thermal Management: The PowerDI®3333-8 package is designed for excellent thermal performance, ensuring the device operates reliably even under high power and temperature conditions.
  • RoHS Compliant: In adherence to environmental standards, the DMTH6010SK3-13 is RoHS compliant, minimizing the ecological impact by avoiding the use of certain hazardous substances.

Applications:

The DMTH6010SK3-13 is versatile and can be used in a variety of applications, including:

  • Power management systems
  • DC/DC converters
  • Load switches
  • Battery management systems
  • Computing and server power supplies

With its exceptional performance characteristics and compact packaging, the DMTH6010SK3-13 from Diodes Incorporated is an excellent choice for designers looking to improve the efficiency and reliability of their power management solutions.

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