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DMTH69M8LFVWQ-7

Part No DMTH69M8LFVWQ-7
Manufacturer Diodes Incorporated
Catalog TRANSISTORS
Description MOSFET BVDSS: 41V-60V POWERDI333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Category Discrete Semiconductor> Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1925 pF @ 30 V
Power Dissipation (Max) 3.6W (Ta), 29.4W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Win Source Part Number WS1309994-DMTH69M8LFVWQ-7
Ultra Librarian 3D Model Ultra Librarian DMTH69M8LFVWQ-7 CAD Model

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:

• Backlighting • Power-management functions • DC-DC converters

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5105 $51.0500
240+ $0.4189 $100.5360
370+ $0.4058 $150.1460
510+ $0.3927 $200.2770
660+ $0.3797 $250.6020
885+ $0.3404 $301.2540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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