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FZT649TC

Part No FZT649TC
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 25V 3A SOT223-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 2V
Power - Max 2 W
Frequency - Transition 240MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-3
Base Product Number FZT649
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1377144-FZT649TC
Ultra Librarian 3D Model Ultra Librarian FZT649TC CAD Model

Description

Introducing the FZT649TC - High-Performance NPN Transistor from Diodes Incorporated

The FZT649TC is a state-of-the-art NPN bipolar junction transistor (BJT) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This transistor is designed to cater to a wide array of applications requiring high-speed switching and amplification, making it an ideal component for your electronic circuit needs.

With its compact SOT-223 package, the FZT649TC offers a space-efficient solution without compromising on power and performance. This package is not only robust but also provides excellent power dissipation characteristics, making it suitable for high-density PCB layouts where space is at a premium.

Key Features of the FZT649TC:

  • High Current Capability: The FZT649TC is capable of handling continuous collector currents up to 3A, making it suitable for driving high-current loads.
  • High Power Dissipation: With a power dissipation of 2W, this transistor can handle significant power levels, which is essential for demanding applications.
  • High h<sub>FE: The device offers a high current gain (h<sub>FE) with a typical value of 200 at a collector current of 1A, ensuring efficient current amplification in your circuit.
  • Wide Operating Frequency: The FZT649TC operates efficiently at higher frequencies, making it suitable for applications that require fast switching times.
  • Robust Voltage Ratings: It features a collector-emitter voltage (V<sub>CEO) of 30V and a collector-base voltage (V<sub>CBO) of 60V, providing a good safety margin for a variety of operating conditions.

This high-performance transistor is perfect for use in power management circuits, motor control systems, and as a switch in various electronic devices. Its high gain bandwidth and fast switching speeds make it an excellent choice for audio amplifiers, signal processing, and other high-frequency applications.

Whether you are designing consumer electronics, automotive systems, or industrial controls, the FZT649TC from Diodes Incorporated will help you achieve a reliable and efficient design. With its excellent performance characteristics and reliability, it is a go-to component for engineers and designers looking for a high-quality NPN transistor.

Choose the FZT649TC for your next project and experience the quality and performance that Diodes Incorporated is known for.

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2565 $50.0175
480+ $0.2105 $101.0400
740+ $0.2039 $150.8860
1,015+ $0.1974 $200.3610
1,315+ $0.1908 $250.9020
1,755+ $0.1710 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,069 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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