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MMDT4126-7-F

Part No MMDT4126-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 25V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 400mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 2mA, 1V
Maximum Power Dissipation 200mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 041733-MMDT4126-7-F
Ultra Librarian 3D Model Ultra Librarian MMDT4126-7-F CAD Model

Description

The MMDT4126-7-F from Diodes Incorporated is a high-performance, dual NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This small-signal transistor is known for its efficiency and reliability, making it a popular choice among professionals in the electronics industry.

The dual NPN configuration of the MMDT4126-7-F allows for the compact integration of two transistors within a single SOT-363 package. This space-saving design is ideal for applications where board space is at a premium. The device features a continuous collector current of 200 mA and a collector-emitter voltage (VCEO) of 25V, providing sufficient power handling capabilities for most low to medium power requirements.

With its high current gain bandwidth product and low collector-emitter saturation voltage, the MMDT4126-7-F is optimized for high-speed switching applications. The fast switching times ensure minimal power loss and improved overall efficiency in circuits. These characteristics make it well-suited for use in signal processing, amplification, and other switching applications.

The MMDT4126-7-F also boasts excellent linearity, which is crucial for maintaining signal integrity in amplification applications. Its matched pair configuration allows for better thermal tracking and improved performance in differential amplifier circuits. Additionally, the device offers low noise figures, which is beneficial for audio and other sensitive signal applications.

Diodes Incorporated has designed the MMDT4126-7-F with the highest standards of quality and reliability. The product is RoHS compliant, ensuring that it meets the latest environmental standards and is free from hazardous substances. Its robust construction guarantees a long operational life, even under challenging conditions.

In summary, the MMDT4126-7-F is a versatile and reliable component that provides designers with the performance they require for a wide array of electronic designs. Its dual NPN configuration, high-speed switching, and excellent linearity make it a valuable addition to any circuit where space, efficiency, and reliability are key considerations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
815+ $0.0713 $58.1095
1,975+ $0.0586 $115.7350
3,055+ $0.0567 $173.2185
4,215+ $0.0549 $231.4035
5,450+ $0.0531 $289.3950
7,285+ $0.0476 $346.7660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,500 pieces
MOQ: 815 pcs
Order Increment : 1 pcs
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