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ZVN2106ASTZ

Part No ZVN2106ASTZ
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.45A TO92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.4V @ 1mA
Max Input Capacitance 75pF @ 18V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package E-Line (TO-92 compatible)
Dimension E-Line-3
Win Source Part Number 214714-ZVN2106ASTZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN2106ASTZ CAD Model

Description

Introducing the ZVN2106ASTZ MOSFET from Diodes Incorporated

The ZVN2106ASTZ is a high-performance N-Channel Enhancement Mode Vertical DMOS FET designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This MOSFET is a testament to the company's commitment to providing innovative solutions that meet the evolving needs of the electronics industry. It is housed in a compact SOT-223 package, which offers a balance between power capability and size, making it suitable for a wide range of applications.

With its continuous drain current (ID) of 600 mA and a maximum drain-source voltage (VDSS) of 60V, the ZVN2106ASTZ is capable of handling moderate power levels with ease. It is particularly well-suited for high-speed switching applications due to its low on-resistance (RDS(on)) of just 5Ω at VGS of 10V. This low on-resistance ensures high efficiency and minimal power loss during operation, which is critical for maintaining performance in power-sensitive designs.

The device also boasts a low threshold voltage (VGS(th)) of 1V to 3V, which allows for easy drive capability and is compatible with standard logic levels. This feature simplifies the integration of the ZVN2106ASTZ into circuits that require precise control over switching behavior, such as power management systems, motor controllers, and LED drivers.

The ZVN2106ASTZ is also characterized by its high input impedance and fast switching speed. These attributes make it an excellent choice for applications where a high degree of control and responsiveness is required. Additionally, the MOSFET's rugged design ensures reliability and stability over a wide range of operating conditions, with a maximum junction temperature of 150°C, providing designers with confidence in the longevity and durability of their products.

For those concerned with environmental impact, the ZVN2106ASTZ is RoHS compliant, meaning it does not contain hazardous substances commonly found in electronic components. This compliance reflects Diodes Incorporated's dedication to environmental responsibility and the production of components that meet global environmental standards.

In summary, the ZVN2106ASTZ from Diodes Incorporated is a versatile and reliable N-Channel MOSFET that offers excellent performance in a variety of applications. Its combination of power efficiency, fast switching, and robust design makes it a valuable component for designers looking to optimize their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4310 $58.1850
330+ $0.3538 $116.7540
510+ $0.3427 $174.7770
700+ $0.3316 $232.1200
905+ $0.3206 $290.1430
1,210+ $0.2874 $347.7540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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