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ZVN4424ASTOA

Part No ZVN4424ASTOA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 240V 0.26A TO92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 240V
Continuous Drain Current at 25°C 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 1mA
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±40V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 5.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package E-Line (TO-92 compatible)
Dimension E-Line-3
Win Source Part Number 1120316-ZVN4424ASTOA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN4424ASTOA CAD Model

Description

Introducing the ZVN4424ASTOA MOSFET from Diodes Incorporated

The ZVN4424ASTOA is a high-performance N-Channel Enhancement Mode Vertical DMOS FET designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is a testament to Diodes Incorporated's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

With its compact SOT223 package, the ZVN4424ASTOA is optimized for space-constrained applications while offering robust electrical characteristics. It boasts a low on-resistance of just 1.2 ohms, which translates to improved efficiency and reduced power losses during operation. As a result, the device is well-suited for power management tasks in a variety of electronic systems.

The ZVN4424ASTOA operates at a continuous drain current of 4.5A, making it an excellent choice for handling moderate power loads. Additionally, it features a maximum drain-source voltage (Vds) of 240V, providing a wide safety margin for applications involving high voltages. This makes the ZVN4424ASTOA a versatile component for use in power supplies, motor control circuits, and lighting systems.

One of the key advantages of the ZVN4424ASTOA is its high input impedance, which minimizes the drive power required and simplifies the interfacing with control circuits. This characteristic, coupled with fast switching speeds, ensures that the device can efficiently handle high-frequency operations, which is crucial for modern power electronics and inverter circuits.

The ZVN4424ASTOA also features integrated protection mechanisms, including a built-in gate-source Zener diode, which protects against electrostatic discharge (ESD) and ensures the reliability and longevity of the device. This level of protection is essential for maintaining performance in harsh electrical environments.

In summary, the ZVN4424ASTOA from Diodes Incorporated is a highly reliable and efficient N-Channel MOSFET that offers designers a combination of low on-resistance, high voltage capacity, and fast switching speeds. Its compact form factor and integrated protection features make it a top choice for engineers looking to optimize their power management systems across a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6472 $58.2480
220+ $0.5311 $116.8420
340+ $0.5144 $174.8960
465+ $0.4978 $231.4770
600+ $0.4813 $288.7800
805+ $0.4315 $347.3575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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