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ZXMN10B08E6QTA

Part No ZXMN10B08E6QTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 61V~100V SOT26 T&R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.3V, 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 497 pF @ 50 V
Power Dissipation (Max) 1.1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-26
Package / Case SOT-23-6
Standard Package 3,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1106416-ZXMN10B08E6QTA
Ultra Librarian 3D Model Ultra Librarian ZXMN10B08E6QTA CAD Model

Description

Introducing the ZXMN10B08E6QTA - A High-Performance MOSFET from Diodes Incorporated

The ZXMN10B08E6QTA is a cutting-edge Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leader in the semiconductor industry. This MOSFET is specifically engineered to deliver exceptional performance for a wide range of applications, ensuring efficiency and reliability in your electronic designs.

Key Features

  • Low On-Resistance: The ZXMN10B08E6QTA boasts an extremely low on-resistance (RDS(on)), which translates to reduced conduction losses and improved power efficiency in your circuits.
  • High Continuous Drain Current: With its ability to support a high continuous drain current (ID), this MOSFET can handle significant power without compromising performance, making it ideal for demanding applications.
  • Enhanced Thermal Performance: The device is encapsulated in an E6 package, which provides excellent thermal performance, ensuring the MOSFET operates effectively even under high-temperature conditions.
  • Voltage Rating: It is designed to operate at a voltage rating that accommodates common electronic applications, providing versatility and compatibility with a variety of circuits.

Applications

The ZXMN10B08E6QTA is suitable for a broad range of applications, including but not limited to:

  • Power management circuits
  • DC-DC converters
  • Motor drives and controllers
  • Load switches
  • Battery management systems
  • Switching regulators

Quality and Reliability

Diodes Incorporated is committed to providing high-quality semiconductor products. The ZXMN10B08E6QTA is built to meet stringent quality standards, ensuring that it delivers consistent performance and reliability. Whether you are developing a prototype or mass-producing a product, you can trust this MOSFET to meet your needs.

In conclusion, if you're looking for a MOSFET that offers low on-resistance, high current capability, and superior thermal performance, the ZXMN10B08E6QTA from Diodes Incorporated is an excellent choice. Its versatility across various applications makes it a valuable component in any electronic designer's toolkit.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3999 $57.9855
355+ $0.3282 $116.5110
550+ $0.3179 $174.8450
755+ $0.3077 $232.3135
975+ $0.2975 $290.0625
1,300+ $0.2666 $346.5800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,970 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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