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ZXMP10A18GTA

Part No ZXMP10A18GTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 2.6A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 26.9nC @ 10V
Max Input Capacitance 1055pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1120407-ZXMP10A18GTA
Family Name ZXMP10A18G
Introduction Date March 15, 2005
ECCN EAR99
Country of Origin Germany
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMP10A18GTA CAD Model

Description

Product Overview: ZXMP10A18GTA

The ZXMP10A18GTA is a state-of-the-art P-channel MOSFET designed and manufactured by Diodes Incorporated, a leading company in the semiconductor industry. This component is well-suited for a variety of applications, thanks to its high efficiency and reliability. It is commonly used in power management tasks, such as switching and amplification in electronic circuits.

Key Features

  • Low On-Resistance: The ZXMP10A18GTA boasts an extremely low on-resistance, which significantly reduces power loss and improves overall efficiency in electronic circuits.
  • High Threshold Voltage: With a high threshold voltage, this MOSFET can easily be driven by logic-level voltages, making it compatible with a wide range of control circuitries.
  • Advanced PowerTrench® Process: Utilizing Diodes Incorporated's proprietary PowerTrench® process, the ZXMP10A18GTA offers superior performance, including lower gate charge and reduced capacitance.
  • Enhanced Durability: The device is designed to withstand high energy pulses in the avalanche and commutation modes, which ensures a longer operational life.

Electrical Specifications

The ZXMP10A18GTA has a continuous drain current of -1.4A and a pulsed drain current of -5.6A. The drain-source voltage is -100V, and the power dissipation is 1.4W, which allows for robust performance in various electrical environments. It operates over a wide temperature range, ensuring reliability under varying conditions.

Applications

This MOSFET is ideal for use in load switch and battery protection circuits. It is also suitable for power management in portable devices, such as smartphones, tablets, and laptops, as well as in other consumer electronics where energy efficiency is paramount.

Package Details

The ZXMP10A18GTA comes in a compact SOT-223 package, which is designed for surface-mount technology (SMT). This small footprint allows for high-density PCB layouts and is perfect for space-constrained applications.

Quality and Environmental Compliance

Diodes Incorporated is committed to providing environmentally friendly products. The ZXMP10A18GTA is RoHS compliant and free from harmful substances, ensuring it meets global environmental standards and regulations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0413 $52.0650
120+ $0.8544 $102.5280
185+ $0.8277 $153.1245
250+ $0.8010 $200.2500
325+ $0.7743 $251.6475
435+ $0.6942 $301.9770
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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