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ZXMP6A13GTA

Part No ZXMP6A13GTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 1.7A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 5.9nC @ 10V
Max Input Capacitance 219pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 390 mOhm @ 900mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 036996-ZXMP6A13GTA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZXMP6A13GTA CAD Model

Description

Introducing the ZXMP6A13GTA P-Channel Enhancement Mode MOSFET by Diodes Incorporated

The ZXMP6A13GTA is a high-performance, P-channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This compact and efficient MOSFET is designed to meet the needs of modern electronic applications requiring energy-efficient power management.

With a drain-source voltage (VDS) of -60V and a continuous drain current (ID) of -4.6A, the ZXMP6A13GTA is capable of handling significant power in a small package. Its low threshold voltage ensures that it can be driven by low-voltage control signals, making it suitable for battery-operated devices and low-voltage logic circuits.

The device features a low on-resistance (RDS(on)) of only 70mΩ at VGS of -10V and ID of -4.6A, which translates to reduced power losses and improved efficiency in operation. This characteristic is particularly beneficial in applications such as load switching and power management where energy conservation is crucial.

Encased in a SOT-223 package, the ZXMP6A13GTA offers a compact form factor that is ideal for space-constrained designs. The MOSFET's surface-mount package is compatible with automated assembly processes, ensuring ease of integration into various circuit designs.

Moreover, the ZXMP6A13GTA is designed with robustness in mind. It features built-in thermal overload protection and high continuous current rating, which contribute to the device's reliability and longevity. Its fast switching speed makes it an excellent choice for high-frequency applications.

Applications for the ZXMP6A13GTA are diverse and include power supply conversion, motor control, and other power management tasks in consumer electronics, telecommunications, and industrial systems. Its combination of low power dissipation, high efficiency, and reliability make it a versatile component in any power management solution.

In summary, the ZXMP6A13GTA from Diodes Incorporated is a testament to the company's commitment to providing high-quality, energy-efficient components for the electronics industry. Its performance characteristics and compact design make it a top choice for designers looking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3621 $50.6940
295+ $0.3392 $100.0640
460+ $0.3277 $150.7420
660+ $0.3048 $201.1680
855+ $0.2934 $250.8570
1,065+ $0.2819 $300.2235
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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