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BS170_D26Z

Part No BS170_D26Z
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 500MA TO-92
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Input Capacitance 40pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 830mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 200mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Win Source Part Number 1024307-BS170_D26Z
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BS170_D26Z CAD Model

Description

The BS170_D26Z is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Fairchild/ON Semiconductor. It is designed for low-power switching applications and is commonly used in logic-level circuits and small signal amplification. The 'D26Z' likely refers to a specific manufacturing batch or internal code.

Applications

  • Low-power switching circuits.
  • Logic-level converters.
  • Small signal amplifiers.
  • Relay drivers.
  • LED drivers.

Features

  • N-channel enhancement mode.
  • Low gate threshold voltage.
  • Fast switching speed.
  • High input impedance.
  • Low on-resistance (RDS(on)).
  • Lead-free package.

Benefits

  • Easy to drive with logic-level signals.
  • Efficient switching performance.
  • Minimal gate drive current required.
  • Reduced power dissipation.
  • Environmentally friendly due to lead-free construction.

Additional Details

The BS170 is typically housed in a TO-92 package, suitable for through-hole mounting. Key electrical characteristics include a drain-source voltage (VDS) rating, gate-source voltage (VGS) rating, and continuous drain current (ID) rating. The low gate threshold voltage allows it to be driven directly by 3.3V or 5V logic circuits. The RDS(on) value is a critical parameter that determines the power dissipation during switching. Care should be taken to ensure that the device operates within its specified voltage and current limits to prevent damage.

The BS170 is a widely used and readily available MOSFET, making it a popular choice for various low-power electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2220 $58.8300
635+ $0.1823 $115.7605
985+ $0.1765 $173.8525
1,355+ $0.1709 $231.5695
1,750+ $0.1652 $289.1000
2,345+ $0.1481 $347.2945
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,370 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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