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FCP850N80Z

Part No FCP850N80Z
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 8A TO220-3 / N-Channel 800 V 8A (Tc) 136W (Tc) Through Hole TO-220-3
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Fairchild Semiconductor
Packaging Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1315 pF @ 100 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
ECCN EAR99
HTSUS 8542.39.0001
Other Part Number ONSFSCFCP850N80Z,2156-FCP850N80Z
Standard Package 1
Win Source Part Number 1323928-FCP850N80Z
Ultra Librarian 3D Model Ultra Librarian FCP850N80Z CAD Model

Description

The Fairchild Semiconductor FCP850N80Z is an N-channel MOSFET transistor that has a maximum drain to source voltage of 800V and a continuous drain current of 8A at 25°C.

  • Manufacturer: Fairchild Semiconductor
  • Type: N-channel MOSFET transistor
  • Maximum Drain to Source Voltage: 800V
  • Continuous Drain Current @ 25°C: 8A
  • Maximum Rds On: 850mOhm @ 3A and 10V
  • Gate Charge: 29nC @ 10V
  • Note: Requires expertise in its usage and handling.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.5401 $60.1817
40+ $2.9048 $116.1920
62+ $2.8136 $174.4432
85+ $2.7235 $231.4975
110+ $2.6322 $289.5420
147+ $2.3597 $346.8759
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Availability: 11,470 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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