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FDB3632_F085

Part No FDB3632_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 12A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037970-FDB3632_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB3632_F085 CAD Model

Description

The Fairchild/ON Semiconductor FDB3632_F085 is an N-channel MOSFET designed for use in a variety of applications.

  • Maximum Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 12A (Ta)
  • On-Resistance: 9 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Package: D2PAK (TO-263AB)
  • Operating Temperature Range: -55°C to 175°C
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $27.8572 $55.7144
5+ $22.8572 $114.2860
7+ $22.1429 $155.0003
10+ $21.4286 $214.2860
13+ $20.7143 $269.2859
17+ $18.5714 $315.7138
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,146 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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