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FDD6690S

Part No FDD6690S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2010 pF @ 15 V
Power Dissipation (Max) 1.3W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 129143-FDD6690S
Ultra Librarian 3D Model Ultra Librarian FDD6690S CAD Model

Description

Description

The FDD6690S stands out as a versatile N-channel MOSFET. With enhanced features engineered for stability and control, this component excels in a wide array of electronic projects.

Applications

  • Energy Storage Systems
  • Electric Vehicle Technology
  • Renewable Energy Systems
  • High-Fidelity Audio Equipment

Features and Benefits

  • Stability and Control: Offers reliable operation in variable conditions.
  • Enhanced Thermal Performance: Reduces operational heat for better longevity.
  • Integration Flexibility: Easily adaptable to various system architectures.

Additional Details

The FDD6690S is crafted for those seeking precision and adaptability in their electronic designs. Its robustness allows it to meet the challenges of progressive technologies and ever-changing environmental demands.

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