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Same model may have multiple batches, images only for reference.
FDD86326 Real Image
Same model may have multiple batches, images only for reference.

FDD86326

Part No FDD86326
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V TRENCH DPAK
Datasheet
FDD86326 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 8A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 1035pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 62W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038123-FDD86326
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD86326 CAD Model

Description

The 1038123-FDD86326 is an active N-channel MOSFET from Fairchild/ON Semiconductor.

  • Power Dissipation: 3.1W (Ta), 62W (Tc)
  • Package: D-PAK (TO-252AA)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 8A (Ta), 37A (Tc) @ 25°C
  • Maximum Gate Charge: 19nC @ 10V
  • Maximum Input Capacitance: 1035pF @ 50V
  • Supply and Demand: Sufficient
  • Quantity per Package: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5869 $63.4760
90+ $1.3021 $117.1890
140+ $1.2614 $176.5960
190+ $1.2208 $231.9520
245+ $1.1801 $289.1245
330+ $1.0580 $349.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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