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FDD8878

Part No FDD8878
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 880pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 066950-FDD8878
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD8878 CAD Model

Description

FDD8878 MOSFET Overview

The FDD8878 is an efficient n-channel MOSFET tailored for power switching applications, offering low resistance and superior speed in its operations. Its highly reliable design is well-suited for a variety of industrial and consumer electronics.

  • Applications:
    • Inverter circuits
    • Power supply units
    • Electromechanical relay replacements
  • Features and Benefits:
    • Enhanced energy efficiency due to low resistance
    • Exceptional thermal performance
    • Smooth operational transitions
  • Additional Details:
    • Maximum drain current: 60A
    • Drain-source voltage: 30V
    • Package type: TO-252

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,891 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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