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Same model may have multiple batches, images only for reference.
FDJ129P
Same model may have multiple batches, images only for reference.

FDJ129P

Part No FDJ129P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.2A SC75-6
Datasheet
FDJ129P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 780pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 70 mOhm @ 4.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC75-6 FLMP
Dimension SC75-6 FLMP
Win Source Part Number 015999-FDJ129P
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDJ129P CAD Model

Description

The FDJ129P is a P-channel MOSFET transistor with a maximum power dissipation of 1.6W (Ta). It has a drain-source breakdown voltage of 20V and a continuous drain current of 4.2A (Ta). The gate-source threshold voltage is 1.5V @ 250μA, and the maximum gate charge is 6nC @ 4.5V. The maximum Rds On at Id, Vgs is 70 mOhm @ 4.2A, 4.5V.

  • Package Type: SC75-6 FLMP
  • Mounting Technology: Surface Mount
  • Polarity: P-channel
  • Technology: MOSFET
  • Popularity: High
  • Supply and Demand: Balanced

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