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Same model may have multiple batches, images only for reference.
FDME1023PZT Real Image
Same model may have multiple batches, images only for reference.

FDME1023PZT

Part No FDME1023PZT
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL SIGNAL FIELD-EFFECT TRANSI / Mosfet Array 2 P-Channel (Dual) 20V 2.6A 600mW Surface Mount 6-UMLP (1.6x1.6)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Manufacturer Fairchild Semiconductor
Packaging Bulk
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.6A
Rds On (Max) @ Id, Vgs 142mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V
Power - Max 600mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Case / Package 6-UFDFN Exposed Pad
Supplier Device Package 6-UMLP (1.6x1.6)
HTSUS 0000.00.0000
Other Part Number FAIFSCFDME1023PZT,2156-FDME1023PZT
Standard Package 1
Win Source Part Number 1325357-FDME1023PZT
Ultra Librarian 3D Model Ultra Librarian FDME1023PZT CAD Model

Description

The Fairchild Semiconductor FDME1023PZT is a dual P-channel MOSFET transistor with a logic level gate.

  • Drain-to-Source Voltage: 20V
  • Continuous Drain Current: 2.6A
  • On-Resistance: 142mOhm @ 2.3A and 4.5V
  • Gate Charge: 7.7nC @ 4.5V
  • Input Capacitance: 405pF @ 10V
  • Package: 6-UMLP (1.6x1.6)
  • Win Source Part Number: 1325357-FDME1023PZT

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