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FDMS3604AS

Part No FDMS3604AS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 13A/23A 8-PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A, 23A
Maximum Rds On at Id,Vgs 8 mOhm @ 13A, 10V
Gate-Source Threshold Voltage 2.7V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1695pF @ 15V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Win Source Part Number 125175-FDMS3604AS
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDMS3604AS CAD Model

Description

The FDMS3604AS from Fairchild/ON Semiconductor (Win Source Part Number 125175-FDMS3604AS) is a dual N-channel asymmetrical FET with a logic level gate.

  • Package: Power56
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13A, 23A @ 25°C
  • Rds On (Max): 8 mOhm @ 13A, 10V
  • Gate-Source Voltage (Max): 2.7V @ 250μA
  • Gate Charge (Max): 29nC @ 10V
  • Input Capacitance (Max): 1695pF @ 15V
  • Power Dissipation (Max): 1W

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8850 $65.9750
75+ $1.5465 $115.9875
120+ $1.4980 $179.7600
160+ $1.4507 $232.1120
210+ $1.4022 $294.4620
280+ $1.2566 $351.8480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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