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Same model may have multiple batches, images only for reference.
FDMS8888 Real Image
Same model may have multiple batches, images only for reference.

FDMS8888

Part No FDMS8888
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13.5A 8-PQFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13.5A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1585pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 13.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6), Power56
Dimension 8-PowerTDFN
Win Source Part Number 016094-FDMS8888
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS8888 CAD Model

Description

The FDMS8888 is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Maximum Power Dissipation: 2.5W (Ta), 42W (Tc)
  • Popularity: Medium
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13.5A (Ta), 21A (Tc) at 25°C
  • Maximum Rds On: 9.5 mOhm @ 13.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4163 $63.7335
100+ $1.1622 $116.2200
155+ $1.1258 $174.4990
215+ $1.0896 $234.2640
275+ $1.0531 $289.6025
370+ $0.9443 $349.3910
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Availability: 4,480 pieces
MOQ: 45 pcs
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