The Fairchild/ON Semiconductor MOSFET is a high-performance N-Channel device that offers a drain-source breakdown voltage of 400V and a continuous drain current of 19A (Tc) at 25°C. With a maximum power dissipation of 215W (Tc), this MOSFET is ideal for use in high-power applications. The device comes in a TO-220-3 package and can operate in a temperature range of -55°C to 150°C (TJ).

• Polarity: N-Channel
• Drain-Source Breakdown Voltage: 400V
• Continuous Drain Current: 19A (Tc) @ 25°C
• Maximum Power Dissipation: 215W (Tc)
• Package: TO-220-3
• Temperature Range: -55°C to 150°C (TJ)
• Gate-Source Threshold Voltage: 5V @ 250μA
• Maximum Rds On: 240 mOhm @ 9.5A, 10V
• Maximum Gate-Source Voltage: ±30V
• Maximum Input Capacitance: 2115pF @ 25V