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FDP24N40

Part No FDP24N40
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 24A TO-220
Sample
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 3020pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 227W (Tc)
Maximum Rds On at Id,Vgs 175 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 204115-FDP24N40
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FDP24N40 CAD Model

Description

The Fairchild/ON Semiconductor FDP24N40 is an N-channel MOSFET with a drain-source breakdown voltage of 400V and a continuous drain current of 24A (Tc). It has a gate-source threshold voltage of 5V @ 250μA and a maximum gate charge of 60nC @ 10V. It is mounted using through hole technology and is packaged in TO-220-3. The operating temperature range is -55°C to 150°C (TJ).

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current: 24A (Tc)
  • Mounting Style: Through Hole
  • Package: TO-220-3
  • Temperature Range: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Rds On: 175 mOhm @ 12A, 10V

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