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Same model may have multiple batches, images only for reference.
FDS6299S Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDS6299S

Part No FDS6299S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 21A 8SOIC
Datasheet
FDS6299S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 3880pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067080-FDS6299S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDS6299S CAD Model

Description

The FDS6299S is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It comes in an 8-SO package and requires a drive voltage of 4.5V to 10V.

  • Rds On (max): 3.9 mOhm @ 21A, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 21A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Maximum Gate Charge: 81nC @ 10V
  • Status: Obsolete (EOL)
  • Common Applications: Power supplies, motor control, and lighting.
  • Popularity: Medium

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