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Same model may have multiple batches, images only for reference.
FDS6576 Real Image
Same model may have multiple batches, images only for reference.

FDS6576

Part No FDS6576
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 11A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 60nC @ 4.5V
Max Input Capacitance 4044pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 11A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016156-FDS6576
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS6576 CAD Model

Description

The Fairchild/ON Semiconductor FDS6576 is a high-performance P-channel MOSFET.

  • Maximum Power Dissipation: 2.5W (Ta)
  • Continuous Drain Current (25°C): 11A (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Rds On (max): 14 mOhm @ 11A, 4.5V
  • Package: 8-SO
  • Mounting: SMD (SMT)
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Input Capacitance: 4044pF @ 10V
  • Popularity: Balanced
  • Package Quantity: 2,500 pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7128 $53.4600
150+ $0.6677 $100.1550
235+ $0.6452 $151.6220
335+ $0.6000 $201.0000
435+ $0.5775 $251.2125
545+ $0.5549 $302.4205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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