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Same model may have multiple batches, images only for reference.
FDS6675 Real Image
Same model may have multiple batches, images only for reference.

FDS6675

Part No FDS6675
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 2470pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067086-FDS6675
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Portable Devices, Computers & Computer Peripherals
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS6675 CAD Model

Description

The FDS6675 is a P-channel MOSFET transistor from Fairchild/ON Semiconductor. It has a balanced supply and demand status.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11A @ 25°C
  • Applications: Power Management, Portable Devices, Computers, Computer Peripherals
  • Package: 8-SO
  • Power Dissipation: 2.5W (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge (Maximum): 62nC @ 10V
  • Rds On (Maximum): 13 mOhm @ 11A, 10V
  • Package Quantity: 2,500 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4692 $58.7680
100+ $1.2058 $120.5800
150+ $1.1677 $175.1550
205+ $1.1307 $231.7935
265+ $1.0926 $289.5390
355+ $0.9794 $347.6870
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Availability: 24,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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