The Fairchild/ON Semiconductor 016170-FDS6699S is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 30V.

• Device Type: N-Channel MOSFET
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current (at 25°C): 21A
• Gate-Source Threshold Voltage: 3V @ 1mA
• Max Gate Charge: 91nC @ 10V
• Technology: SMD (SMT)
• Rds On (Max): 3.6 mOhm @ 21A, 10V
• Packaging: Reel - TR
• Mounting: SMD (SMT)
• Power Dissipation (Max): 2.5W (Ta)
• Temperature Range: -55°C to 150°C (TJ)
• Package: 8-SO
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V