The Fairchild/ON Semiconductor 016205-FDS8960C is a dual N and P-Channel MOSFET with logic level gate feature. This MOSFET is designed for use in industrial power management applications and is packaged in a reel - TR with a mounting type of SMD (SMT).

• Maximum Power Dissipation: 900mW
• Drain-Source Breakdown Voltage: 35V
• Continuous Drain Current (25°C): 7A, 5A
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Gate Charge: 7.7nC @ 5V
• Maximum Input Capacitance: 570pF @ 15V
• Maximum Rds On (Id,Vgs): 24 mOhm @ 7A, 10V
• Supply and Demand: Limited with 2,500 pieces per package