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Same model may have multiple batches, images only for reference.
FDU8580 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDU8580

Part No FDU8580
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 35A I-PAK
Datasheet
FDU8580 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 1445pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 49.5W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1038481-FDU8580
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDU8580 CAD Model

Description

The Fairchild/ON Semiconductor FDU8580 is a N-channel MOSFET.

  • Type: N-Channel MOSFET
  • Power Dissipation: 49.5W (Tc)
  • Continuous Drain Current: 35A (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-251AA
  • Compliance: Halogen-Free
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Status: Obsolete (EOL)

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