The Fairchild/ON Semiconductor FDV301N is an N-channel MOSFET discrete semiconductor product. It has a power dissipation of 350mW and a drain-source breakdown voltage of 25V. The product has a continuous drain current of 220mA at 25°C and a gate-source threshold voltage of 1.06V at 250μA.

• Maximum Gate Charge: 0.7nC @ 4.5V
• Maximum Input Capacitance: 9.5pF @ 10V
• Package: SOT-23
• Drive Voltage: 2.7V (max Rds on), 4.5V (min Rds on)

The product is compliant with halogen-free regulations and is commonly used in industrial applications due to its high popularity and sufficient supply and demand status. The FDV301N is manufactured in China, Israel, and the Philippines and is estimated to have an EOL date of 2024.