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FQA6N90C

Part No FQA6N90C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 6A TO-3P
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1770pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 198W (Tc)
Maximum Rds On at Id,Vgs 2.3 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 204269-FQA6N90C
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQA6N90C CAD Model

Description

The Fairchild/ON Semiconductor FQA6N90C is an N-channel MOSFET designed for use in a variety of applications.

  • Power Dissipation: 198W (Tc)
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 6A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Input Capacitance: 1770pF @ 25V
  • Status: Active
  • Mounting: Through-Hole
  • Package: TO-3PN
  • Popularity: Medium
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7764 $62.1740
80+ $1.4576 $116.6080
125+ $1.4114 $176.4250
170+ $1.3664 $232.2880
220+ $1.3213 $290.6860
295+ $1.1839 $349.2505
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,070 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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