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Same model may have multiple batches, images only for reference.
FQB19N10TM Real Image
Same model may have multiple batches, images only for reference.

FQB19N10TM

Part No FQB19N10TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 19A D2PAK
Datasheet
FQB19N10TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 780pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.75W (Ta), 75W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1039611-FQB19N10TM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB19N10TM CAD Model

Description

The FQB19N10TM is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Mounting: surface mount (SMD)
  • Package: D2PAK (TO-263AB)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 19A (Tc) @ 25°C
  • Rds On @ Id,Vgs: 100 mOhm @ 9.5A, 10V
  • Gate Charge: 25nC @ 10V
  • Input Capacitance: 780pF @ 25V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Category: Discrete Semiconductor Product
  • Status: Obsolete(EOL)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Supply and Demand: balanced

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