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Same model may have multiple batches, images only for reference.
FQD20N06TF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQD20N06TF

Part No FQD20N06TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 16.8A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 16.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 590pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 38W (Tc)
Maximum Rds On at Id,Vgs 63 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039715-FQD20N06TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD20N06TF CAD Model

Description

The Fairchild/ON Semiconductor FQD20N06TF is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 2.5W (Ta) and 38W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 16.8A (Tc)
  • Maximum Rds On: 63 mOhm @ 8.4A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 15nC @ 10V
  • Maximum Input Capacitance: 590pF @ 25V
  • Package: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Supply and Demand Status: Balanced

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