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Same model may have multiple batches, images only for reference.
FQP44N10 Real Image
Same model may have multiple batches, images only for reference.

FQP44N10

Part No FQP44N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 43.5A TO-220
Datasheet
FQP44N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 43.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 1800pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 146W (Tc)
Maximum Rds On at Id,Vgs 39 mOhm @ 21.75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 001231-FQP44N10
Family Name FQP44N10
Introduction Date January 12, 2000
ECCN EAR99
Country of Origin China, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control, Audio
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP44N10 CAD Model

Description

The FQP44N10 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor. The supply and demand status is balanced.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 43.5A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 62nC @ 10V
  • Maximum Rds On: 39 mOhm @ 21.75A, 10V
  • Introduction Date: January 12, 2000
  • Suitable for: power management, motor drive & control, and audio.

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85+ $1.1941 $101.4985
130+ $1.1567 $150.3710
180+ $1.1194 $201.4920
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
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