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Same model may have multiple batches, images only for reference.
FQP4N20L Real Image
Same model may have multiple batches, images only for reference.

FQP4N20L

Part No FQP4N20L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.8A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 5.2nC @ 5V
Max Input Capacitance 310pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 1.35 Ohm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040350-FQP4N20L
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP4N20L CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is an N-Channel device designed for reliable and efficient performance.

  • Power Dissipation: 45W (Tc)
  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 200V
  • Applications: Power supplies, motor control, lighting systems
  • Supply and Demand: Balanced
  • Package Quantity: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2713 $50.1905
450+ $0.2227 $100.2150
700+ $0.2157 $150.9900
960+ $0.2087 $200.3520
1,240+ $0.2018 $250.2320
1,660+ $0.1809 $300.2940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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