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Same model may have multiple batches, images only for reference.
FQPF20N06L Real Image
Same model may have multiple batches, images only for reference.

FQPF20N06L

Part No FQPF20N06L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 15.7A TO-220F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 15.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 630pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 55 mOhm @ 7.85A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 001242-FQPF20N06L
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF20N06L CAD Model

Description

The FQPF20N06L is an N-channel MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Maximum Power Dissipation: 30W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 60V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 13nC @ 5V
  • Rds On (max): 55 mOhm @ 7.85A, 10V
  • Case/Package: TO-220F
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand: Limited
  • Package Quantity: 1k pieces

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