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Same model may have multiple batches, images only for reference.
FQPF2N80YDTU Real Image
Same model may have multiple batches, images only for reference.

FQPF2N80YDTU

Part No FQPF2N80YDTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V TO-220-3
Datasheet
FQPF2N80YDTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 550pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 6.3 Ohm @ 750mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F-3 (Y-Forming)
Dimension TO-220-3 Full Pack, Formed Leads
Win Source Part Number 1039915-FQPF2N80YDTU
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQPF2N80YDTU CAD Model

Description

The FQPF2N80YDTU is a MOSFET from Fairchild/ON Semiconductor.

  • Polarity: N-channel
  • Mounting: Through Hole
  • Technology: MOSFET
  • Package: TO-220F-3 (Y-Forming)
  • Dimension: TO-220-3 Full Pack, Formed Leads
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 1.5A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Input Capacitance: 550pF @ 25V
  • Maximum Rds On: 6.3 Ohm @ 750mA, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case / Package: TO-220F-3 (Y-Forming)
  • Quantity per Package: 800

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80+ $1.5254 $122.0320
120+ $1.4779 $177.3480
165+ $1.4301 $235.9665
210+ $1.3825 $290.3250
280+ $1.2395 $347.0600
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Availability: 1,600 pieces
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